IQE plc has announced a strategic partnership with VisIC Technologies, in an intriguing development for the electric-vehicle industry. This partnership intends to develop the highest-performing gallium nitride (GaN) power products for use in EV inverters, with the potential to transform the future of sustainable transportation.
In recent years, GaN technology has gained traction due to its potential to revolutionize power electronics and make EVs more efficient and dependable. IQE, with its vast knowledge of GaN technology, and VisIC Technologies, with its innovative direct-drive d-mode GaN (D3GaN) technology, are joining forces to stretch the limits of what is possible in the EV industry.
In an interview with Power Electronics News, Ilia Bunin, product manager and technical sales at VisIC Technologies, said that the collaboration with IQE has several important goals, including the following:
As IQE is a high-quality European GaN-HEMT-on-silicon epi wafer supplier, the collaboration will expand and strengthen VisIC’s local supply chain, taking into account European car original-equipment–manufacturer (OEM) companies’ high-volume demand.
The combination of IQE’s advanced wafer processing and VisIC’s GaN semiconductor know-how will increase GaN HEMT devices’ performance—specifically, further reduction of on-state resistance (RDS(on)) and increasing the device ampacity for very high current of hundreds of amperes per die, enabling reduction of motor inverter costs.
GaN is a semiconductor material that offers numerous advantages over traditional silicon in power electronics applications. It boasts higher electron mobility, faster switching speeds and lower power losses, making it a game-changer for the EV industry. With EVs becoming increasingly popular, the demand for more efficient and reliable power solutions is greater than ever before.
The automotive segment has been witnessing a gradual transition from traditional silicon to GaN devices for low-voltage conversion in DC/DC applications. However, when it comes to high-voltage applications, silicon and silicon carbide technologies have traditionally dominated the market.
VisIC’s strategic approach revolves around providing cutting-edge, automotive-grade GaN power devices specifically tailored for the 400-V and 800-V battery segments. To secure its leading position in this competitive arena, VisIC is committed to offering these power devices at a more attractive price point compared with SiC technology. This price advantage is crucial in driving the replacement and penetration rate of GaN technology within the automotive sector.
VisIC Technologies places a strong emphasis on continuous improvement and innovation within its product portfolio. This commitment is evident in the company’s roadmap, which includes plans to reduce the RDS(on) of its GaN power chips. Currently, with an 8-mΩ chip, VisIC aims to launch a 5-mΩ chip next year. Within the following two years, it is targeting a further reduction in RDS(on), aiming to achieve below 5 mΩ. Such advancements in chip technology will contribute to higher efficiency and better performance in GaN power solutions.
In addition, VisIC Technologies recognizes the growing demand for higher-voltage capabilities in the EV market. To address this need, it is planning to introduce 1,200-V devices. These devices will support the 800-V battery systems that are becoming increasingly prevalent in EVs, especially in two-level modules.
By focusing on price competitiveness, continuous innovation and expanding its product range to address emerging trends in the automotive sector, Bunin commented that VisIC Technologies aims to not only maintain its leading position but also solidify its role as a key player in the future of GaN power solutions within the automotive industry.
GaN semiconductors offer superior performance compared with silicon FETs due to their unique physical properties. GaN transistors come in two main technologies: e-mode and d-mode.
E-mode functions like a regular MOSFET, featuring a simpler package, low resistance and bidirectional channel without a body diode. D-mode GaN transistors, on the other hand, require a negative voltage to switch on, but this challenge can be overcome by connecting them in series with a low-voltage silicon MOSFET. E-mode transistors are normally off and are activated by a positive gate voltage.
2.2-mΩ 650-V half-bridge D3GaN power moduleVisIC supports d-mode technology for high-power automotive applications. Its D3GaN technology offers advantages like a higher gate-drive safety margin, improved gate-drive noise immunity, easy paralleling and advanced packaging for efficient power dissipation.
The D3GaN technology from VisIC Technologies promises to reduce EV power consumption, improve reliability and boost overall performance. VisIC’s inventive power electronics solutions could make EVs not only more energy-efficient but also more accessible to consumers by leveraging the benefits of GaN technology.
VisIC Technologies’ Illia BuninBunin envisions GaN power solutions as a revolutionary force in the automotive sector, poised to reshape the industry in several impactful ways. “In today’s automotive market, the cost of SiC components for motor inverters is a widely recognized challenge faced by every original equipment manufacturer,” he said. “Additionally, securing a sufficient supply of SiC materials for the rapidly growing demand driven by the surge in EV production has been a significant hurdle.”
However, the emergence and adoption of more affordable and easier-to-manufacture GaN devices are set to alleviate these challenges. According to Bunin’s perspective, this transformation will commence with the replacement of SiC motor inverters at the 400-V level, starting around 2028. Subsequently, the shift toward GaN technology is expected to extend into the 800-V battery range, particularly with three-level inverters, by 2030.
The implications of this transition are profound. By gradually replacing SiC with GaN power solutions, the EV industry is poised to draw closer to internal-combustion–engine vehicles in terms of cost competitiveness. This shift in cost dynamics is crucial for accelerating the overall transition to EVs, as affordability remains a key consideration for consumers and manufacturers alike.
IQE and VisIC Technologies are teaming up to bring about a significant advancement in the world of power electronics. Their collaborative effort revolves around the development of 200-mm (8-inch) d-mode GaN power epi wafers, set to take place at IQE’s cutting-edge facilities in the U.K.
What sets this collaboration apart is the ingenious choice to harness IQE’s high-voltage 8-inch GaN-on-silicon wafers. This strategic decision not only serves to narrow the cost disparity between GaN and conventional silicon IGBT components but also ensures that GaN delivers performance on par with SiC alternatives.
The partnership aligns with IQE’s strategic diversification into the high-growth power market, a move first announced at its 2022 Capital Markets Day. The GaN power epi wafer market is expected to witness remarkable growth, with forecasts indicating a potential value of $632 million by 2027. IQE recognizes the immense opportunities in this market and is well-positioned to capitalize on them.
“VisIC’s collaboration with IQE is combined with multiple advancements in GaN performance to bring VisIC’s next-generation products to the market,” Bunin said. “These next-generation devices will start to appear in OEMs’ hands in late 2024, with the target of having pin-to-pin replacement with VisIC’s current generation of products, enabling faster implementation in consumer vehicles in 2027–2028.”
The IQE–VisIC Technologies collaboration represents a significant step in that direction. By developing high-reliability GaN power products for EV inverters, the partnership is helping to make EVs more efficient, reliable and environmentally friendly.
The adoption of GaN power solutions in EVs holds significant promise for the long-term sustainability and environmental benefits of the automotive industry. According to Bunin, GaN’s use in this context is a pivotal step forward in aligning with the evolution of sustainable transportation. He noted some key points regarding its advantages:
Reduced energy consumption: GaN power devices are known for their higher energy efficiency compared with traditional silicon-based counterparts. This means that EVs equipped with GaN power solutions require less energy to operate, resulting in reduced electricity consumption during charging and driving. Lower energy consumption directly translates into fewer emissions when the electricity comes from renewable or low-emission sources.
Extended battery life: GaN’s efficiency benefits extend to battery management systems. By minimizing energy losses in the power-conversion process, GaN-based systems can help extend the lifespan of EV batteries. Longer-lasting batteries reduce the frequency of replacements and the associated environmental impact of manufacturing and disposing of batteries.
Lightweight and compact design: GaN power electronics are smaller and lighter than their silicon counterparts. This weight reduction contributes to improved fuel efficiency or extended electric range in EVs, thereby reducing the overall environmental footprint of transportation.
Drive toward efficiency: GaN’s higher efficiency in drive cycles translates into less energy waste during acceleration and deceleration in EVs. This not only improves overall vehicle efficiency but also aligns with the automotive industry’s ongoing efforts to reduce emissions and enhance sustainability throughout the supply chain.
Lower emissions: The environmental benefits of GaN in EVs are not limited to vehicle operation. By reducing the energy required for manufacturing and improving vehicle efficiency, GaN contributes to lower emissions in the entire lifecycle of an EV.
Market trends: As global environmental concerns grow and governments implement stricter emissions regulations, the automotive industry is increasingly focusing on sustainable technologies. GaN power solutions align perfectly with this trend, offering a path toward cleaner and more efficient transportation options.
Regarding plans for advancements and applications of GaN technology beyond EV inverters, Bunin mentions that VisIC’s proprietary D3GaN technology is well-suited for the high-reliability, high-voltage and high-current demands of EV drivetrains. The company is open to future expansion into other areas, such as on-board chargers, high-voltage DC/DC converters and battery-disconnect switches. VisIC emphasizes its commitment to monitoring the competitive landscape and positioning itself where its technology can provide the most benefit.
When asked about the versatility of GaN technology in addressing power needs across various industries, Bunin notes that the GaN power semiconductor field is less consolidated compared with silicon or SiC devices. This means that different markets are currently targeting different GaN technologies. However, VisIC focuses on high-voltage and high-current devices, which have applications spanning various industries. These include industrial motors, off-board charging piles for EVs, solar inverters, data centers, AI technologies and other applications that demand high power.
